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Publication number US7 A1 Publication type Application Application number US 11/120,388 Publication date Jul 13, 2006 Filing date May 2, 2005 Priority date Jan 10, 2005 Also published as,,,, Publication number 11120388, 120388, US 20 A1, US 2006/152267 A1, US 7 A1, US 7A1, US A1, US A1, US-A1-7, US-A1-, US20A1, US2006/152267A1, US7 A1, US7A1, US A1, USA1 Inventors Original Assignee Export Citation,, (9), (13), (4), (3) External Links:. Serial Number Ivona Reader. A multi-threshold flip-flop includes a master latch, a slave latch, and at least one control switch. The master latch is composed of an input buffer formed with low threshold (LVT) transistors and a first latch circuit formed with LVT transistors. The slave latch is composed of a second latch circuit formed with high threshold (HVT) transistors and an output driver formed with LVT transistors.

The at least one control switch enables or disables the LVT transistors and is implemented with at least one HVT transistor. The LVT and HVT transistors may be N-FETs and/or P-FETs.

Daletplus Software Download. The multi-threshold flip-flop can operate at high speed, has low leakage current, and can save the logic state when disabled. For complementary metal oxide semiconductor (CMOS), which is widely used for digital circuits and some analog circuits, a major issue with shrinking transistor size is leakage current.

Smaller geometry for a transistor results in higher electric field, which stresses the transistor and causes oxide breakdown. To decrease the electric field, a lower power supply voltage may be used for the smaller geometry transistor. Unfortunately, the lower power supply voltage also increases the delay of the transistor, which is undesirable for a high-speed circuit. To reduce the delay and improve operating speed, the threshold voltage (Vt) of the transistor may be reduced.

The threshold voltage is the voltage at which the transistor turn on. However, the lower threshold voltage and smaller geometry result in higher leakage current, which is the current passing through the transistor when it is turned off. Multi-threshold MOS circuits (e.g., flip-flops) having good performance and low leakage current are described herein. In one embodiment, a multi-threshold flip-flop includes a master latch, a slave latch, and at least one control switch.